HT Semiconductor kta1273 free download

File name kta1273.pdf

KTA1273 TRANSISTOR (PNP) SOT-89-3L FEATURES High Current 1. BASE Low Voltage 2. COLLECTOR Complementary to KTC3205 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 500 mW RJA Thermal Resistance From Junction To Ambient 250 /W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE VCE=-2V, IC=-0.5A 100 320 Collector-emitter saturation voltage VCE(sat) IC=-1.5A,IB=-30mA -2 V Base-emitter voltage VBE VCE=-2V, IC=-500mA -1 V Transition frequency fT VCE=-2V,IC=-500mA 120 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 48 pF CLASSIFICATION OF hFE RANK